Berlin 2012 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 26: Thin film characterization: structure analysis and composition (Ion assisted methods and analysis)
DS 26.1: Vortrag
Mittwoch, 28. März 2012, 15:00–15:15, H 2032
(contribution withdrawn (duplicate of DS 21.1)) Investigation of the effect of the incorporated Fe atoms in the ion-beam induced nanopatterns on Si (001) — •behnam Khanbabaee1, Andreas Biermanns1, Marina Cornejo2, Frank Frost2, and Ullrich Pietsch1 — 1Universität Siegen, Festkörperphysik,Siegen, Germany — 2Leibniz-Institute für Oberflächenmodifizierung e. V. (IOM), Leipzig, Germany
Ion beam erosion of semiconductor surfaces can modify the surface and depends on main sputtering parameters; different surface topographies such as ripple or dot like pattern are fabricated on the surface. Recent experiments have shown that the incorporation of foreign metallic atoms during the sputtering process plays a crucial role in pattern formation on surfaces. In the result of investigation we report on the depth profile of Fe atoms incorporated in sputtering process on Si (100) with low energy Kr ion beam. X-ray reflectivity (XRR) measurements determine the concentration profile of Fe atoms. X-ray absorption near edge spectroscopy (XANES) at the Fe K-edge (7112 eV) shows the formation of Fe rich silicide near surface region. X-ray photoelectron spectroscopy (XPS) shows a shift in the binding energy of Si2p levels at the surface compared top bulk confirming the formation of different phases of Fe-silicide on tope and below the surface. The depth profiles obtained by XRR are compared to results obtained by complementary secondary-ion mass spectrometry (SIMS).