Berlin 2012 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 26: Thin film characterization: structure analysis and composition (Ion assisted methods and analysis)

DS 26.2: Vortrag

Mittwoch, 28. März 2012, 15:15–15:30, H 2032

Pattern transfer on fused silica samples using sub-aperture reactive ion beam etching — •André Miessler and Thomas Arnold — Leibniz-Institut für Oberflächenmodifizierung (IOM), Permoserstrasse 15, D-04318 Leipzig, Germany

In comparison to sole Ar ion beam sputtering Reactive Ion Beam Etching (RIBE) reveals the main advantage of increasing the selectivity for different kind of materials due to chemical contributions during the material removal. Therefore RIBE is qualified to be an excellent candidate for pattern transfer applications. The goal of the present study is to apply a sub-aperture reactive ion beam for pattern transfer on large fused silica samples. Concerning this matter, the etching behavior in the ion beam periphery plays a decisive role.

Using a Kaufman-typed ion source with NF₃ as reactive gas, XPS measurements of the modified surface exposes impurities like Ni, Fe and Cr, which belongs to chemically eroded material of the plasma pot and a layer formation of silicon nitride, handicaps the etching process mainly in the beam periphery where the sputtering contribution decrease. These side effects influence the pattern transfer of trench structures, produced in AZ MIR 701 photoresist by lithography on a 2" fused silica plate, by changing the selectivity due to modified chemical reactions of the resist layer. Concerning this we investigate a RF-Ion source for sub aperture reactive ion beam applications and finally we examine the pattern transfer on large fused silica plates using NF₃-sub-aperture RIBE.