Berlin 2012 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 38: Poster III: Resistive switching (jointly with DF, KR, HL); Thermoelectric materials (Focused session); Micro- and nanopatterning (jointly with O); Ion irradiation effects
DS 38.12: Poster
Donnerstag, 29. März 2012, 17:30–19:00, Poster E
Measurements at a Thermoelectric Nanowire Characterisation Platform (TNCP) — •D. Kojda1, R. Mitdank1, Z. Wang2, M. Kröner2, P. Woias2, and S.F. Fischer1 — 1Neue Materialien, Humboldt-Universität zu Berlin, D-10099 Berlin — 2IMTEK, University of Freiburg, D-79110 Freiburg
Nanowires are expected to improve the thermoelectric efficiency [1]. To date, the thermoelectric characterisation of a single nanowire involving the measurements of the Seebeck coefficient, the electrical and the thermal conductivity remains challenging.
For this purpose IMTEK designed the Thermoelectric Nanowire Characterisation Platform (TNCP), which was established by the means of silicon micromachining [2]. It contains two symmetric Si cantilevers where the nanowire takes place in between. Thin Pt micro-heaters on each cantilever create a temperature gradient.
Aiming to determine the platforms’ characteristics, we measured the specific I-V-curves of the heater and the wire contact points in the temperature range between 5 K and 295 K. We detected the temperature-dependant resistance and the generated temperature difference as a function of power. Starting with a residual resistance of 54 Ω, the heaters resistance increases linearly above 30 K up to 351 Ω at room temperature. Our next investigations will cover the applicability of dielectrophoresis in order to bridge the two cantilevers with a single wire.
K. Nielsch et al., Advanced Energy Materials, October 2011
Z. Wang et al., Transducers Conference, June 2011