Berlin 2012 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 38: Poster III: Resistive switching (jointly with DF, KR, HL); Thermoelectric materials (Focused session); Micro- and nanopatterning (jointly with O); Ion irradiation effects
DS 38.16: Poster
Donnerstag, 29. März 2012, 17:30–19:00, Poster E
Doped Amorphous Si/Ge Nanostructured Thin Films via Glancing Angle Deposition — •Jens Bauer, Christoph Grüner, and Bernd Rauschenbach — Leibniz-Institut für Oberflächenmodifizierung, Permoserstrasse 15, D-04318 Leipzig, Germany
The preparation of efficient thermoelectric nanomaterials is a big challenge in modern material science. Key research fields are the defined adjustment of structure geometry, size and orientation on one hand and the structural material optimization on the other hand. For this purpose we present PVD investigations on self-organized a-Si and a-Ge nanostructures by a recent nanofabrication technique, the glancing angle deposition (GLAD). Nanostructure shape and distribution can be controlled via the geometrical deposition parameters, i.e. the polar and azimuthal particle incidence angle. Multicomponent nanomaterials as up-right nanocolumns with incorporated axial Si/Ge multi-heterojunctions are realized by sequential deposition and a fast azimuthal rotation speed. For structural material customization the amorphous materials were passivated by atomic hydrogen. The hydrogen incorporation was verified via effusion tests, X-ray reflection, SIMS and FTIR measurements. Furthermore, in situ B and Sb doping was investigated. SIMS analyses showed high doping levels up to the solid solubility limits. Hydrogen effusion experiments revealed no difference between continuous films and GLAD nanostructures. However, B doping was found to strongly enhance the hydrogen release. Since hydrogen effusion started at temperatures >320∘C in a-Si without doping, with B doping hydrogen released already above room temperature.