Berlin 2012 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 38: Poster III: Resistive switching (jointly with DF, KR, HL); Thermoelectric materials (Focused session); Micro- and nanopatterning (jointly with O); Ion irradiation effects
DS 38.17: Poster
Donnerstag, 29. März 2012, 17:30–19:00, Poster E
Thermoelectric transport coefficients of bismuth compound nanomaterials — •Daniel Huzel1,2, Heiko Reith1,2, Matthias C Schmitt1,2, Friedemann Völklein1, and Michael Huth2 — 1IMtech, Hochschule RheinMain, Am Brückweg 26, D-65428 Rüsselsheim — 2Physikalisches Institut, Goethe-Universität, Max-von-Laue-Str. 1, D-60438 Frankfurt am Main
Thermoelectric transport properties show a strong dependency on composition, crystallinity and geometric structure of a sample. With a decrease in size and dimensionality the conductivity decreases, therefore nanostructures are a promising field for materials / structures aiming at a high thermoelectric figure of merit (ZT).
Our work focuses on the determination of the thermoelectric transport coefficients of bismuth and bismuth compound nanowires. We present the Z-Chip, a platform for the combined measurement of Seebeck-coefficient, thermal and electrical conductivity on a single thermoelectric nanowire which allows the characterization of ZT of the wire. Results of bismuth telluride nanowires are shown but the measurement platform can be used for different nanostructures as well.
Additionally, a setup for the steady-state measurement of cross-plane thermal conductivity for embedded nanowires is demonstrated. Results obtained by this method are presented as well.
With regard to future applications, stability and reliability results on bismuth antimonide films are also shown.