Berlin 2012 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 38: Poster III: Resistive switching (jointly with DF, KR, HL); Thermoelectric materials (Focused session); Micro- and nanopatterning (jointly with O); Ion irradiation effects
DS 38.22: Poster
Donnerstag, 29. März 2012, 17:30–19:00, Poster E
Investigations on the Ti0.5Zr0.25Hf0.25NiSn1−xSbx system. — •Michael Schwall and Benjamin Balke — Institute of Inorganic Chemistry and Analytical Chemistry, Johannes Gutenberg - University, Mainz
Heusler compounds with C1b structure were reported from several groups in Asia and the USA as suitable for thermoelectric applications. Thereby, is the best published Figure of Merit ZT = 1.5 for a n-type material was found in the Ti0.5Zr0.25Hf0.25NiSn1−xSbx system and presented by Toschiba and Toyota already in 2005. Since then, nobody was able o reproduce these results. Now, we were able to - almost - reach their high ZT values. In this study, we investigated the reasons for this outstanding thermoelectric properties in the Ti0.5Zr0.25Hf0.25NiSn1−xSbx system. The effect of the microstructure on the transport properties will be described in details. The authors gratefully acknowledge the financial support by the "thermoHeusler" Project (Project No. 0327876D) of the German Federal Ministry of Economics and Technology (BMWi).