Berlin 2012 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 38: Poster III: Resistive switching (jointly with DF, KR, HL); Thermoelectric materials (Focused session); Micro- and nanopatterning (jointly with O); Ion irradiation effects
DS 38.4: Poster
Donnerstag, 29. März 2012, 17:30–19:00, Poster E
Continuum modeling of phase formation in phase change materials — •fatemeh tabatabaei1, markus apel2, and efim brener1 — 1Peter Grünberg Institut (PGI-2), Forschungszentrum Jülich, 52428 Jülich — 2Access e.V., RWTH Aachen, 52072 Aachen
Recently, the use of phase change materials (PCM) in non-volatile rewritable memory devices has expanded substantially. For memory applications a stable crystalline and a metastable amorphous state can be utilized for the data recording.To obtain a quantitative understanding of the kinetics of writing and erasing data, gaining insights into the energy transport and phase boundary movement during the phase transformation is aimed. One of the governing parameters for the transformation kinetics is the mobility of the liquid-solid interface. However, only limited knowledge and models for it is available. We carried out phase field modeling as a continuum simulation technique in order to study rapid crystallization processes in AgInSbTe. We performed spatio-temporal simulations of the crystallization of a molten area in a PCM layer stack initiated by a laser pulse. We refined the simulation concerning experimental conditions for the measurement of the crystallization kinetics. Simulations are performed for different substrate temperatures, i. e. for temperatures close to the melting point of AgInSbTe down to the glass temperature when the amorphous state is involved. The effect of the interface mobility on the solidification kinetics is investigated. A non-linear dependence of the interface kinetic coefficient on temperature is necessary to explain the temperature dependent crystallization velocity observed in experiments.