Berlin 2012 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 38: Poster III: Resistive switching (jointly with DF, KR, HL); Thermoelectric materials (Focused session); Micro- and nanopatterning (jointly with O); Ion irradiation effects
DS 38.9: Poster
Donnerstag, 29. März 2012, 17:30–19:00, Poster E
Nonvolatile resistive switching in Au/BiFeO3/Pt — •Yao Shuai1,2, Chuangui Wu2, Wanli Zhang2, Shengqiang Zhou1, Danilo Bürger1, Stefan Slesazeck3, Thomas Mikolajick3, Manfred Helm1, and Heidemarie Schmidt1 — 1Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P. O. Box 510119, Dresden 01314, Germany — 2State Key Laboratory of Electronic Thin Films and Integrated Devices, — 3Namlab gGmbH, Nöthnitzer Strasse 64, 01187 Dresden, Germany
Nonvolatile bipolar resistive switching has been observed in an Au/BiFeO3/Pt structure, where a Schottky contact and a quasi-Ohmic contact were formed at the Au/BiFeO3 and BiFeO3/Pt interface, respectively. By changing the polarity of the external voltage, the Au/BiFeO3/Pt is switched between two stable resistance states without an electroforming process. The resistive switching is strongly dependent on the deposition pressure of the BiFeO3 thin films, and the resistive switching property of the Au/BiFeO3/Pt stack has been significantly improved by carefully tuning the oxygen pressure during the growth, and a large switching ratio of ~4500 has been achieved. The deposition pressure modifies the concentration of oxygen vacancies and the rectifying behavior of the Au/BiFeO3 junction, and consequently influences the resistive switching behavior of the whole stack.