Berlin 2012 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 40: Resistive switching II (jointly with DF, KR, HL)

DS 40.5: Vortrag

Freitag, 30. März 2012, 12:00–12:15, H 0111

Transient Processes in Response to Electronic Excitation of Phase Change Materials — •Martin Salinga and Martin Wimmer — 1. Institut of Physics, RWTH Aachen University, Germany

In recent years a strong interest in phase change materials has been aroused by their potential for being utilized as the core element of a promising novel electronic memory technology. For such an application it is crucial to understand the characteristic switching mechanisms. Especially the electronic properties of the amorphous phase are of paramount importance. Thus, the strong non-linearity in the current-voltage-dependence of the amorphous phase, often referred to as threshold-switching, has drawn much attention.

In this work the transient current response of vertical Ge2Sb2Te5 devices to controlled voltage excitations is experimentally studied down to a time-scale of a few nanoseconds and analyzed with a particular focus on the delay-time before threshold switching and its dependence on the applied voltage. The results are compared to both experimental and theoretical studies in the literature and their implications for this field of research are discussed.