Berlin 2012 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 44: Poster IV: Thin film photovoltaics; Organic electronics and photovoltaics (jointly with CPP, HL, O); Organic thin films; Trends in atomic layer deposition (Focused session)

DS 44.10: Poster

Freitag, 30. März 2012, 09:30–12:00, Poster E

Electrical Characterization of Doped a-Si:H/c-Si Heterojunctions, Produced by Magnetron Sputtering — •Frank Nobis, Hartmut Kupfer, Philipp Schäfer, Dietrich R. T. Zahn, and Frank Richter — Chemnitz University of Technology, Institute of Physics, 09107 Chemnitz, Germany

We investigate thin films of doped hydrogenated amorphous silicon (a-Si:H) with respect to their application in photovoltaics. Currently, chemical vapour deposition is widely used for the formation of such films providing comparably low defect density and relatively high efficiency of dopants. Our method of choice is pulsed dc magnetron sputtering because this method is well suitable to realize a high-efficiency inline technology for solar cells formation. Thereby a key question in our investigations is the amount of electrically active dopants which can be achieved in the magnetron sputtered films.

We deposited doped a-Si:H films onto oppositely doped silicon wafers. Crucial deposition parameters like substrate temperature and hydrogen partial pressure were varied. The resulting heterojunctions were characterized with respect to electrical film properties and doping efficiencies. Under certain conditions very good rectification ratios of the produced pn-junctions were achieved. This finding is correlated with the doping efficiency in the amorphous films.