Berlin 2012 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 44: Poster IV: Thin film photovoltaics; Organic electronics and photovoltaics (jointly with CPP, HL, O); Organic thin films; Trends in atomic layer deposition (Focused session)
DS 44.12: Poster
Freitag, 30. März 2012, 09:30–12:00, Poster E
Deposition control of thin-film silicon solar cells by optical emission spectroscopy — •Vitalij Schmidt1, Wiebke Hachmann1, Stefan Gruss2, Helmut Stiebig2, and Ulrich Heinzmann1 — 1Fak. f. Physik, Uni Bielefeld, Germany — 2Malibu GmbH & Co. KG
The improvement of the layer quality is one key factor to the overall efficiency of thin-film silicon solar cells. Plasma-enhanced chemical vapor deposition (PECVD) is a widely applied production process for microcrystalline silicon layers (µc-Si). The µc-Si layer is used as a bottom cell material within a tandem stack.
Via in-situ spectroscopy we gain information on the deposition used as feedback for process control. The plasma emits light, characteristic for its composition. Research is done on the hydrogen dilution of silane as it affects the crystalline fraction of the grown layer. Observing the time development of the specific wavelengths for hydrogen and silane (Hα at 656 nm and SiH* at 414 nm) we determine the layer-thickness dependent crystallinity.
In order to achieve µc-Si layers with constant crystallinity we focus on monitoring and adjustment of the SiH*/Hα-ratio. This ratio can be used for a homogeneous µc-Si layer deposition.