Berlin 2012 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 44: Poster IV: Thin film photovoltaics; Organic electronics and photovoltaics (jointly with CPP, HL, O); Organic thin films; Trends in atomic layer deposition (Focused session)
DS 44.27: Poster
Freitag, 30. März 2012, 09:30–12:00, Poster E
I-V Characteristics of Copper Phthalocyanine Based Laterally Stacked Devices Fabricated by Semiconductor Processing — •J. Ghosh1, D. Reuter1, M. Rennau1, K. Hiller1, G. Salvan1, M. Fronk1, D.R.T. Zahn1, C. C. Bof Bufon1,2, and O. Schmidt1,2 — 1Chemnitz University of Technology, Germany — 2Institute for Integrative Nanosciences, IFW Dresden, Germany
This work presents a new approach of fabricating arrays of electrodes, separated by sub-micrometer gaps allowing the systematic investigation of electric properties of organic semiconductors. The laterally stacked devices are fabricated by using a trench isolation technique for separating different electrical potentials, as it is known for micromachining technologies like Single Crystal Reactive Ion Etching and Metallization (SCREAM). The essential part of this process is the patterning of sub-micrometer trenches onto the silicon substrate in a single lithographic step. Afterwards, the trenches are refilled by SiO2 to allow the precise tuning of the electrode separation gap. The metal electrodes are formed via magnetron sputtering. This technological approach allows us to fabricate device structures with a transport channel length in the range of 100-250 nm by conventional photolithography. In this experiment, three different metals like Au, Co, and Ni were used as the electrode materials, while copper phthalocyanine, being deposited by thermal evaporation in high vacuum, was employed as the organic semiconductor under evaluation. The correlation, observed between the current across the junction and the gap between the electrodes, can be explained by the space charge limited current model.