Berlin 2012 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 44: Poster IV: Thin film photovoltaics; Organic electronics and photovoltaics (jointly with CPP, HL, O); Organic thin films; Trends in atomic layer deposition (Focused session)
DS 44.8: Poster
Freitag, 30. März 2012, 09:30–12:00, Poster E
Photoluminescence of CuInXGa1−XSe2 absorbers and solar cells — •Sven Schönherr1, Jakob Haarstrich1, Udo Reislöhner1, Carsten Ronning1, and Thorsten Rissom2 — 1Institut für Festkörperphysik, Friedrich Schiller Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany — 2Helmholtz Zentrum Berlin für Materialien und Energie, Solar Energy Research, Institute for Technology, Lise-Meitner-Campus, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
Photoluminescence (PL) has been studied on high-efficiency CdS/CIGS solar cells. The sample layers were illuminated by a HeNe-Laser in a PL setup with a spot size of 1mm and in a micro-PL (µPL) setup, where the laser beam was focused by a microscope objective down to reach a spatial resolution of ∼1 µm at the focal spot on the sample. The samples were mounted in a LHe flow cryostat and studied as a function of temperatures from 3.5 to 300 K.
Photoluminescence spectra were measured from the front and the back site of the Cu(In,Ga)Se2 absorber layers and different peak energies were detected corresponding to the typical band-gap grading of CIGS solar cells. Additionally, the micro-PL measurements have shown a lateral peak shift, which could be interpreted as varying grains or by different luminescence radiation of grains and grain boundaries.