Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 15: Graphene: Structure and Theory I
HL 15.4: Vortrag
Montag, 26. März 2012, 15:45–16:00, EW 201
Bernal graphite is a narrow gap semiconductor — Nicolas Garcia1, •Pablo Esquinazi2, Jose Barzola-Quiquia2, and Srujana Dusari2 — 1Laboratorio de Física de Sistemas Pequeños y Nanotecnología, Consejo Superior de Investigaciones Científicas, E-28006 Madrid, Spain — 2Division of Superconductivity and Magnetism, Institut für Experimentelle Physik II, Universität Leipzig, Linnéstraße 5, D-04103 Leipzig, Germany
We have studied the resistance of a large number of highly oriented graphite samples with areas ranging from several mm2 to a few µm2 and thickness from ∼ 10 nm to several tens of micrometers. The measured resistance can be explained by the parallel contribution of semiconducting graphene layers with low carrier density < 109 cm−2 and the one from metalliclike internal interfaces. The results indicate that ideal graphite with Bernal stacking structure is a narrow-gap semiconductor with an energy gap Eg ∼ 40 meV.