Berlin 2012 – wissenschaftliches Programm

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11:30	HL 40.1	The dangling-bond defect in crystalline and amorphous silicon: insights from ab initio calculations of EPR parameters — •Gernot Pfanner, Christoph Freysoldt, and Jörg Neugebauer

11:45	HL 40.2	Vibrational spectra of charged point defects in ionic oxides — Jianchuan Wang, •Christoph Freysoldt, and Jörg Neugebauer

12:00	HL 40.3	Evidence for Fe2+ in Wurtzite Coordination: Iron Doping Stabilizes ZnO Nanoparticles — •Jianping Xiao, Agnieszka Kuc, Suman Pokhrel, Marco Schowalter, Satyam Parlapalli, Andreas Rosenauer, Thomas Frauenheim, Lutz Mädler, Lars Pettersson, and Thomas Heine

12:15	HL 40.4	Defects in amorphous silicon nitrides: Si₃N₄-Si₃N_x — •Leif Eric Hintzsche, Georg Kresse, Martijn Marsmann, Gerald Jordan, Changming Fang, and Thomas Watts

12:30	HL 40.5	Charge Carrier Density Control in In-based Multi Compound Solution Processed Oxide TFTs — •Marlis Ortel, Marko Marinkovic, Gesa Helms, and Veit Wagner

12:45	HL 40.6	THz spectroscopy of the 29 cm⁻¹ oxygen vibrational line in natural silicon and isotopically enriched ²⁸Si — •Kurt Lassmann, Boris Gorshunov, P.S. Korolev, E.S. Zhukova, V.P. Kalinsuhkin, N.V. Abrosimov, P.G. Sennikov, H.-J. Pohl, S. Zakel, and Martin Dressel

13:00	HL 40.7	Diffusion of Cu (I) in amorphous In₂S₃ thin films investigated by Rutherford backscattering spectroscopy — •Albert Juma, Paul Pistor, Thomas Dittrich, and Elke Wendler