Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 83: Focus Session: III-Nitride Heterostructures for Optoelectronics - Polarization Reduction, Green Gap and High In-containing Alloys

HL 83.2: Topical Talk

Donnerstag, 29. März 2012, 15:30–16:00, EW 201

Nitride laser diodes - from arrays to tapered resonator devices — •Piotr Perlin — Institute of High Pressure Physics, Sokolowska 29/37, 01-142 Warsaw, Poland

We presently observe, an increasing demand for high optical power laser diodes operating in the wavelength range between 370 and 530 nm. This demand is biased by new applications like UV curing, printing or RGB sources for large optical displays. In order to construct truly high power laser diodes, nitrides technology should go along the similar (though not identical) way the arsenide devices went years ago. Laser diode arrays including large arrays and mini-arrays belong to this class of previously tested solutions. Within this presentation I will discuss perspectives and challenges related to the construction of multi-emitters devices, demonstrating the capabilities of reaching multi-Watt range of optical powers. I will also point out the possibility of dramatically improve the optical beam quality of high power nitride laser diode by using a tapered resonator. I will show that by using this geometry a M2=1.5 high power devices could be demonstrated.