Berlin 2012 –
wissenschaftliches Programm
HL 83: Focus Session: III-Nitride Heterostructures for Optoelectronics - Polarization Reduction, Green Gap and High In-containing Alloys
Donnerstag, 29. März 2012, 15:00–18:15, EW 201
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15:00 |
HL 83.1 |
Hauptvortrag:
Compositional instability in InGaN and InAlN thick films with high indium content — •Fernando Ponce
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15:30 |
HL 83.2 |
Topical Talk:
Nitride laser diodes - from arrays to tapered resonator devices — •Piotr Perlin
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16:00 |
HL 83.3 |
Topical Talk:
Advantages and issues of m-plane freestanding GaN substrates grown by halide vapor phase epitaxy for InGaN and AlGaN epitaxial growth — •Shigefusa Chichibu, Kouji Hazu, Pierre Corfdir, Jean-Daniel Ganière, Benoît Deveaud-Plédran, Nicolas Grandjean, Shuich Kubo, Hideo Namita, Satoru Nagao, Kejji Fujito, and Kenji Shimoyama
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16:45 |
HL 83.4 |
Hauptvortrag:
Low Temperature Growth Methods for Overcoming Perceived Limitations in III-Nitride Epitaxy — •W. Alan Doolittle, Michael Moseley, and Brendan Gunning
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17:15 |
HL 83.5 |
Topical Talk:
Nonpolar and semipolar GaN on GaN, Si, and Sapphire substrates — Vitaliy Avrutin, Natalia Izioumskaia, Ümit Özgür, and •Hadis Hadis Morkoç
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17:45 |
HL 83.6 |
Topical Talk:
What causes the efficiency droop in GaN-based LEDs ? — •Joachim Piprek
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