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HL: Fachverband Halbleiterphysik

HL 83: Focus Session: III-Nitride Heterostructures for Optoelectronics - Polarization Reduction, Green Gap and High In-containing Alloys

Donnerstag, 29. März 2012, 15:00–18:15, EW 201

15:00 HL 83.1 Hauptvortrag: Compositional instability in InGaN and InAlN thick films with high indium content — •Fernando Ponce
15:30 HL 83.2 Topical Talk: Nitride laser diodes - from arrays to tapered resonator devices — •Piotr Perlin
16:00 HL 83.3 Topical Talk: Advantages and issues of m-plane freestanding GaN substrates grown by halide vapor phase epitaxy for InGaN and AlGaN epitaxial growth — •Shigefusa Chichibu, Kouji Hazu, Pierre Corfdir, Jean-Daniel Ganière, Benoît Deveaud-Plédran, Nicolas Grandjean, Shuich Kubo, Hideo Namita, Satoru Nagao, Kejji Fujito, and Kenji Shimoyama
16:45 HL 83.4 Hauptvortrag: Low Temperature Growth Methods for Overcoming Perceived Limitations in III-Nitride Epitaxy — •W. Alan Doolittle, Michael Moseley, and Brendan Gunning
17:15 HL 83.5 Topical Talk: Nonpolar and semipolar GaN on GaN, Si, and Sapphire substratesVitaliy Avrutin, Natalia Izioumskaia, Ümit Özgür, and •Hadis Hadis Morkoç
17:45 HL 83.6 Topical Talk: What causes the efficiency droop in GaN-based LEDs ? — •Joachim Piprek
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DPG-Physik > DPG-Verhandlungen > 2012 > Berlin