Berlin 2012 –
wissenschaftliches Programm
KR 10: Crystallography in Nanoscience
Donnerstag, 29. März 2012, 09:30–12:00, E 124
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09:30 |
KR 10.1 |
Hauptvortrag:
On polytypism in III-V nanowires — •Friedhelm Bechstedt, Abderrezak Belabbes, Christian Panse, Jürgen Furthmüller, Dominik Kriegner, and Julian Stangl
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10:00 |
KR 10.2 |
Crystal structure of InAs on Si(111) substrate — •Anton Davydok, Emmanouil Dimakis, Andreas Biermanns, Lutz Geelhaar, and Ullrich Pietsch
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10:20 |
KR 10.3 |
In-situ 3D reciprocal space mapping during mechanical deformation — •Thomas Cornelius, Anton Davydok, Dina Carbone, Vincent Jacques, Raphael Grifone, Marie-Ingrid Richard, Till Hartmut Metzger, Tobias Schülli, Ullrich Pietsch, and Olivier Thomas
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10:40 |
KR 10.4 |
Structure - stoichiometry relationship of mixed Ce1−xPrxO2−δ (x = 0-1) oxides on Si(111) — •Marvin Zoellner, Marcus Bäumer, Michael Reichling, Henrik Wilkens, Joachim Wollschläger, Peter Zaumseil, and Thomas Schroeder
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11:00 |
KR 10.5 |
Crystal size and axial stress effects on the B4 to B1 phase transition pressure in AlN and ZnO nanocrystals investigated with second harmonic generation (SHG) — •Leonore Wiehl, Lkhamsuren Bayarjargal, and Björn Winkler
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11:20 |
KR 10.6 |
Manipulation of Ge quantum dot ordering in alumina matrix by deposition conditions — •Maja Buljan, Carsten Baehtz, Václav Holý, Nikola Radić, Olga Roshchupkina, Slawomir Prucnal, Arndt Muecklich, Václav Valeš, Sigrid Bernstorff, and Joerg Grenzer
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11:40 |
KR 10.7 |
In-situ observation of the Self-assembled growth of ordered Ge nanocrystals embedded within a dielectrical matrix — •Joerg Grenzer, Maja Buljan, Olga Roshchupkina, Carsten Baehtz, and Václav Holý
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