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KR: Fachgruppe Kristallographie

KR 10: Crystallography in Nanoscience

KR 10.2: Talk

Thursday, March 29, 2012, 10:00–10:20, E 124

Crystal structure of InAs on Si(111) substrate — •Anton Davydok¹, Emmanouil Dimakis², Andreas Biermanns¹, Lutz Geelhaar², and Ullrich Pietsch¹ — ¹Festkörperphysik, Universität Siegen, Walter-Flex-Str. 3,57072, Siegen, Germany — ²Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7,10117 Berlin, Germany

We present results of X-ray diffraction analysis of InAs nanowire (NW) grown by catalyze-free molecular beam epitaxy on silicon (111) substrate. Independent from lattice mismatch of 11% the NWs grow with their bulk lattice parameter directly on bare silicon with absence of buffer layer or silicon native oxide layer. The structure of individual NWs has been characterized using a beam nano-focus beam spot of few 100nm*. Using coherent beam illumination certain Bragg peaks if individual NWs display speckle-like diffraction pattern due to particular sets of stacking faults separating wurzite and zinc-blende like structural units. Arrangement and density of stacking faults in particular NWs was estimated via modelling. In addition we characterized parasitic InAs islands appearing in addition to NWs which appear entirly in zinc-blende structure.