T 64: Halbleiterdetektoren: Forschung und Entwicklung 2
Dienstag, 28. Februar 2012, 16:45–19:00, ZHG 001
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16:45 |
T 64.1 |
Optical test stand for SiPM characterisation — •Benjamin Glauß, Thomas Hebbeker, Carsten Heidemann, and Markus Merschmeyer
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17:00 |
T 64.2 |
Studies on afterpulses and saturation of SiPM with fast UV light pulses — •Marco Szalay
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17:15 |
T 64.3 |
Study of detection efficiency distribution and areal homogeneity of SiPMs — •Michal Tesař, Christian Jendrysik, Frank Simon, Jelena Ninković, Hans-Günther Moser, and Rainer Richter
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17:30 |
T 64.4 |
Track Fitting based on Broken Lines for the MU3E Experiment — •Moritz Kiehn, Niklaus Berger, and Andre Schöning
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17:45 |
T 64.5 |
Charakterisierung von HV-MAPS — •Ann-Kathrin Perrevoort, Ivan Peric und Dirk Wiedner
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18:00 |
T 64.6 |
Pixel sensors capacitance determination with PixCap chip — •Miroslav Havranek, Fabian Hügging, Hans Krüger, and Norbert Wermes
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18:15 |
T 64.7 |
Der Galatea Teststand - Analyse von Oberflächeneffekten in koaxialen n-Typ Germanium Detektoren — •Sabine Irlbeck
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18:30 |
T 64.8 |
Determination of the crystal axes in segmented germanium detectors — Iris Abt, Allen Caldwell, Bela Majorovits, and •Oleksandr Volynets
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18:45 |
T 64.9 |
Ladungssammlung an der Si-SiO2-Grenzschicht in Silizium Streifensensoren vor und nach 1 MGy Gammastrahlung — •Thomas Pöhlsen, Robert Klanner, Sergej Schuwalow, Jörn Schwandt und Jiaguo Zhang
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