Jena 2013 – wissenschaftliches Programm

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SYOS: Symposium Plasma und Optische Schichten

SYOS 3: Plasma und Optische Technologien III

SYOS 3.2: Vortrag

Dienstag, 26. Februar 2013, 17:00–17:15, HS 4

Thin film deposition on flat surface using atmospheric pressure plasma source: influence of C:H ratio on film properties — •Ramasamy Pothiraja¹, Max Engelhardt¹, Björn Offerhaus¹, Nikita Bibinov¹, Jan Perne², and Peter Awakowicz¹ — ¹Institute for Electrical Engineering and Plasma Technology, Ruhr-University Bochum, 44801 Bochum, Germany. — ²Institut für Oberflächentechnik, RWTH Aachen University, Germany.

Hydrocarbon films are deposited on flat glass substrate using filamentary plasma discharge ignited in Ar-CH4, Ar-C2H2-H2 and Ar-C2H2 gas mixtures at atmospheric pressure. Deposited films have been characterized using FTIR-ATR, SEM, XPS and hardness measurements. When CH4 or C2H2-3H2 (C:H ratio 1:4) mixture is used as a precursor, film is deposited completely covering substrate surface, and deposition rate is low. Usage of only C2H2 (C:H ratio 1:1) in argon plasma results in the deposition of flakes like porous materials which are grown perpendicular to the surface of glass substrate. This material has higher reactivity towards atmospheric nitrogen than the material which is deposited from either CH4 or C2H2-3H2 precursor. Hardness of films obtained from CH4 as well as C2H2-3H2 precursors under similar conditions are comparable to each other, and harder than the film obtained from C2H2 precursor. In addition to these, plasma parameters are determined for Ar-N2 plasma ignited under similar experimental condition adopted for film deposition process. Nitrogen is used as a sensor gas. Plasma parameters are determined from the OES, voltage current measurement, micro-photography, and numerical simulation.