Jena 2013 – wissenschaftliches Programm

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SYOS: Symposium Plasma und Optische Schichten

SYOS 3: Plasma und Optische Technologien III

SYOS 3.3: Vortrag

Dienstag, 26. Februar 2013, 17:15–17:30, HS 4

Reactive co-sputtering processes in Ar:H2S and Ar:H2Se to deposit chalcopyrite absorber layers for thin film solar cells — •Jonas Krause, Man Nie, Karsten Harbauer, and Klaus Ellmer — HZB Berlin GmbH Hahn-Meitner-Platz 1 14109 Berlin

Reactive magnetron co-sputtering from two targets (CuGa and In) was used to deposit Cu(In,Ga)(S,Se)2 layers as absorbers for thin film solar cells. The good quality of such films has already been proven for CuInS2, where an efficiency of 11.4% has been achieved which is the same as for other preparation techniques. Recently, we extended our experimental environment enabling reactive processes also with Ar:H2Se, in order to deposit selenide chalcopyrites, an absorber material which showed, deposited by other techniques, high efficiencies exceeding 20%. In the first experiments we varied the reactive gas content and the substrate temperature. In addition to comparing the discharge parameters of different Ar-to-reactive-gas ratios, we analyzed the deposited films by XRD, XRF and SEM. We found that the discharge conditions, characterized by the discharge voltage, do not change significantly if H2S is exchanged by H2Se. However by using H2Se a lower percentage of reactive gas is necessary in order to achieve fully selenized films in comparison to the sulfurization in a comparable Ar:H2S process. Furthermore, we also see that the sputtering rate of the metals is significantly influenced by the percentage of reactive gas. The results of the first solar cells processed with absorber layers from this first depositions in Ar:H2Se are promising and show the opportunities of reactive co-sputtering of electronically active films for solar cells.