Regensburg 2013 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 1: Tutorial: Integration and Modelling of Nanoelectronic Components

DS 1.1: Tutorium

Sonntag, 10. März 2013, 16:00–16:30, H3

Current transport through nanoscale electronic components — •Artur Erbe — Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany

The semiconductor industry has been scaling down electronics in the course of the past decades. It is clear that at the current speed of miniaturization fundamental limits will restrict the further development of nanoelectronics. Therefore, alternative ways for building electronics need to be developed. Possible candidates for active nanoelectronic building blocks are single organic molecules or metallic nanoparticles. The first step in building electronic circuits from these single components is the definition of a reliable contact to external connections. In this talk an overview on contacting schemes will be given and their advantages and problems will be discussed. Typical results, which have been found on single molecules and metallic nanoparticles using these techniques, will be presented. These facts clearly show that nanoelectronic components for future electronic are already being developed and that the next step in these developments will be the interconnecting of these single building blocks in order to produce integrated circuits.