Parts | Days | Selection | Search | Updates | Downloads | Help
DS: Fachverband Dünne Schichten
DS 1: Tutorial: Integration and Modelling of Nanoelectronic Components
DS 1.4: Tutorial
Sunday, March 10, 2013, 17:45–18:15, H3
Silicon Nanowires: A Versatile Technology Platform for Nanoelectronic Research — •Thomas Mikolajick1, 2, Andre Heinzig2, Jens Trommer1, Dominik Martin1, Matthias Grube1, Andreas Krause1, and Walter Weber1 — 1NaMLab GmbH, Nötnitzer Strasse 64, 01187 Dresden — 2Chair for Nanoelectronic Materials, TU Dresden, Nötnitzer Strasse 64, 01187 Dresden
Silicon nanowire based metal insulator silicon (MIS) devices offer the best gate control and therefore will enable the ultimate scaling of CMOS devices. Moreover, the specific features of a very precise controlled structure and the quasi 1-dimensional geometry (transport) make silicon nanowires an ideal platform for new device concepts like junctionless devices or tunnel field effect transistors. Recently, the reconfigurable field effect transistor (RFET) [1] using the unique properties of silicon nanowires [2] enables the electrical configuration of n- or p-type behavior. In this talk the technology as well as the device properties of the RFET will be explained. It will be shown that the same basic structure can successfully be applied to realize chemical and biochemical sensors. Finally, additional examples of the application of the base technology in anodes for Li-ion batteries will be given. [1] A. Heinzig, et al. Nano Lett. 12, 119 (2012) [2] D. Martin et al. Phys. Rev. Lett. 107, 216807 (2011)