Regensburg 2013 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 12: Poster Session II: Functionalized semiconductor nanowires (jointly with HL); Resistive switching (jointly with DF, KR, HL); Thermoelectric materials

DS 12.1: Poster

Montag, 11. März 2013, 17:00–20:00, Poster B1

Optical properties of Sn-doped CdS nanowires — •Marcel Wille¹, Sebastian Geburt¹, Robert Röder¹, Mengyao Zhang², Jia Grace Lu², and Carsten Ronning¹ — ¹Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena — ²Department of Physics and Electrical Engineering, University of Southern California, Los Angeles, USA

Nanowires (NWs) are promising candidates for future optoelectronic applications due to their possibility of light generation, waveguide properties and light amplification in a Fabry-Perot resonator. The controlled modification of their electrical and optical properties, for example by doping, will continue the consequent progress in NW research. The in-situ doping during the VLS synthesis is a difficult task due to the restricted solubility of dopants in gold (Au), which is typically used as catalyst. Therefore, we investigate an alternative catalyst (Sn) in order to succeed in successful doping during growth. SEM an TEM were performed to analyse the morphology of CdS NWs synthesized under usage of Sn as catalyst. The stoichiometry and successful doping with Sn was proven by EDX point measurements and mappings. In micro-PL, macro-PL and CL measurements at low and room temperatures the NBE, DLE and DAP (donor-acceptor pair) transitions were investigated to state about the optical properties. The occurring DAP transition, which was proven by power- and temperature dependent PL measurements, indicates the successful incorporation of Sn into the CdS NWs.