Regensburg 2013 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 12: Poster Session II: Functionalized semiconductor nanowires (jointly with HL); Resistive switching (jointly with DF, KR, HL); Thermoelectric materials

DS 12.13: Poster

Montag, 11. März 2013, 17:00–20:00, Poster B1

Glancing Angle Deposited Silicon/Germanium Nanostructures for Electronic Applications — •Christoph Grüner and Bernd Rauschenbach — Leibniz-Institut für Oberflächenmodifizierung, Permoserstraße 15, D-04318 Leipzig, Germany

Obtaining control over the physical properties of semiconductors is a big challenge for future electronics. The use of nanostructures can provide this control, since quantum mechanical and surface effects become important. Nanostructured thin films can show higher optical absorption or reduced reflectivity, higher thermal resistivity and altered electrical properties compared to bulk material. Most preparation techniques for such structures, like etching or VLS growth, are limited by a small window of usable materials or process conditions. With Glancing Angle Deposition (GLAD) it is possible to produce nanostructures from a wide range of materials and with highly customizable shapes, such as slanted and vertical wires, spirals or zig-zag structures. In this technique a highly oblique incidence of deposited material causes small obstacles to cast shadows during the high vacuum deposition, so that areas behind them do not receive material. This leads to the growth of a highly porous thin film. The shape of the individual structures can be influenced by a controlled substrate rotation. We present silicon/germanium GLAD heterostructures with different shapes, a varying germanium distribution and adjustable doping. We also show some approaches to prepare electrical contacts to nanostructure arrays for device integration.