Regensburg 2013 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 12: Poster Session II: Functionalized semiconductor nanowires (jointly with HL); Resistive switching (jointly with DF, KR, HL); Thermoelectric materials

DS 12.18: Poster

Montag, 11. März 2013, 17:00–20:00, Poster B1

Thickness-dependent thermoelectric properties of BiSb thin films — •Heiko Reith^1,2, Friedemann Voelklein², and Michael Huth¹ — ¹Physikalisches Institut, Goethe-University, Frankfurt am Main, Germany — ²IMtech, Hochschule Rhein Main, Ruesselsheim, Germany

We investigated the thermoelectric properties of BiSb thin films in the thickness range between 50 nm and 500 nm. For the determination of the thermoelectric properties we measured the Seebeck-coefficient and the thermal and electrical conductivity to obtain the figure of merit of the films. The thermal conductivity was measured using a specially designed microchip. For the electrical conductivity and Seebeck-measurement a four point structure deposited on a Si/Si₃N₄-wafer was used. The BiSb films were deposited onto these substrates using a thermal evaporation process. During the deposition of the films the substrates and microchips were placed next to each other and the thickness was detected by a quartz microbalance. Afterwards the thickness was measured with a surface profilometer. We present the used measurement techniques and results. From the measurement results we determine the figure of merit of the films and discuss the results using finite size effect models.