Regensburg 2013 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 15: Organic Electronics and Photovoltaics II (jointly with CPP, HL, O)
DS 15.5: Vortrag
Dienstag, 12. März 2013, 10:30–10:45, H32
Correlation of morphology and electronic properties of MoO3-doped CBP layers II: IR spectroscopic study — •Tobias Glaser1,5, Sebastian Beck1,5, Daniela Donhauser2,5, Maybritt Kühn3,5, Bernd Lunkenheimer4,5, Andreas Köhn4,5, Eric Mankel3,5, and Annemarie Pucci1,5 — 1Universität Heidelberg, Kirchhoff-Institut für Physik — 2Technische Universität Braunschweig, Institut für Hochfrequenztechnik — 3Technische Universität Darmstadt, Fachbereich Materialwissenschaft, Fachgebiet Oberflächenforschung — 4Universität Mainz, Institut für Physikalische Chemie — 5InnovationLab GmbH, Heidelberg
In order to obtain a further understanding on the charge transfer process in p-type doping using transition metal oxides, we performed in-situ FTIR-spectroscopy on thin layers of 4,4’-Bis(N-carbazolyl)-1,1’-biphenyl (CBP) doped with MoO3. In the doped layers, charge transfer complexes (CTCs) are formed, that exhibit a broad electronic excitation in the near IR region. These CTCs are located at the interface of the MoO3 agglomerates and the organic matrix, inducing an interface dipole. The intensity of this electronic excitation in the spectra of layers with various doping concentrations indicates a linear increase of the agglomerates’ surface area with MoO3 concentration. The vibrational changes in the spectra of the doped layers indicate a charge transfer of Z=1e within the CTCs. By cooling the substrate during the deposition process, the agglomeration of the dopants can be suppressed.
Financial support by BMBF (project MESOMERIE) is gratefully acknowledged.