Regensburg 2013 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 18: Micro- and Nanopatterning (jointly with O)

DS 18.3: Vortrag

Mittwoch, 13. März 2013, 10:00–10:15, H8

Modelling the etching behavior of GaAs irradiated with protons in a proton beam writing process — •Ulrich Vetter, Tristan Koppe, Charlotte Rothfuchs, and Hans Hofsäss — 2. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen

Creating three dimensional structures in semiconductors such as GaAs is a very promising application of proton beam writing [1] which has been realized recently without changing the beam energy or the ion species, but simply by varying the fluence during MeV proton irradiation [2]. In order to predict the evolving structures in the subsequent electrochemical etching process it is desirable predict the 3D damage concentration distribution as input for finite element simulations of the etching process. This distribution is determined from SRIM simulations [3] and the damage dependent transition behavior known from work on proton implantation isolation frequently applied in semiconductor manufacturing processes [4].

[1] J.A. van Kan et al., Appl. Phys. Lett. 83 (2003) 1629.

[2] M. Schulte-Borchers , U. Vetter, T. Koppe, H. Hofsäss, J. Micromech. Microeng. 22 (2012) 025011.

[3] J.F. Ziegler, J.P. Biersack, and M.D. Ziegler. SRIM - The Stopping and Range of Ions in Matter. SRIM Co. 2008.

[4] S.J. Pearton, Mater. Sci. Rep. 4 (1990) 313