Regensburg 2013 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 2: Focus Session: Ion Beam Induced Surface Patterns I

DS 2.1: Topical Talk

Montag, 11. März 2013, 09:30–10:00, H32

Mechanisms of ion beam induced surface pattern formation — •Thomas Michely — II. Physikalisches Institut, Universität zu Köln, Zülpicher Str. 77, 50937 Köln

Related to three different material classes - metals, elemental semiconductors and epitaxial graphene - three different pattern formation mechanisms will be presented. At sufficiently high temperatures ion induced pattern formation on metals may be considered as the inverse of homepitaxial growth and is determined by anisotropies of diffusion related to the crystalline structure. Elemental semiconductors like Si and Ge amorphize under the ion beam at ambient conditions and form patterns most readily in the presence of silicide forming impurities. Finally, ion beam induced pattern formation in epitaxial graphene can originate from an inhomogeneous interaction of graphene with its substrate, driving vacancies into an ordered array of vacancy clusters.