Regensburg 2013 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 23: Focus Session: Thin Film Photovoltaic Materials and Solar Cells II

DS 23.7: Vortrag

Mittwoch, 13. März 2013, 16:15–16:30, H8

Electrodeposition of aromatic compounds on silicon and subsequent cross linking - first steps towards a novel bottom-up synthesis of graphene — •Janek Zeuschner, Gerald V. Troppenz, Jörg Rappich, and Norbert H. Nickel — Helmholtz-Zentrum Berlin, Institut für Siliziumphotovoltaik, Kekuléstr. 5, 12489 Berlin, Germany

The state-of-the-art method for the production of high-quality macroscopic graphene sheets is CVD synthesis on copper. However, during the growth process holes and grain boundaries are introduced in the material, resulting in adverse effects on its electronic properties. Furthermore, future technological applications of graphene require a transfer step from copper to silicon. This is expected to disturb the ordered structure of the graphene sheets even further. Therefore it would be highly desirable to grow single-layer graphene on silicon directly. We present first steps of a novel approach to synthesize graphene from small molecules on single-crystal silicon. During electrodeposition of suitable aromatic organic compounds, the defect density on the silicon-solution interface is monitored by in-situ photoluminescence spectroscopy. The mechanism of deposition is analyzed and results from cross-linking experiments are shown.