Regensburg 2013 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 32: Poster Session IV: Atomic layer deposition; Organic thin films; Organic Electronics and Phototovoltaics; Organic Materials for Spintronics - from spinterface to devices; Thin film photovoltaic materials and solar cells
DS 32.32: Poster
Donnerstag, 14. März 2013, 17:00–20:00, Poster B2
Tailoring Contacts in Organic Transistors by Dithiocarbamate Monolayers — •Dominik Meyer, Christian Effertz, Franziska Martin, Ingolf Segger, Daniel Gebauer, and Matthias Wuttig — Institute of Physics (IA), RWTH Aachen University, 52066 Aachen, Germany
It is well-known that the device performance of organic field-effect transistors (OFETs) strongly depends on the device geometry: Top-contact bottom-gate (TCBG) transistors usually show much better current on-to-off ratios and higher charge carrier mobilities than bottom-contact bottom-gate (BCBG) transistors. This deficiency can primarily be attributed to the difference in the electric field distribution. However, the ability to modify metal S/D-contacts with self-assembling monolayers (SAMs) is solely provided by BC OFETs. SAMs may have a direct impact on charge carrier injection barriers by changing the work function of the metal contact. We have reported previously that the work function of gold can be lowered by 2 eV with dithiocarbamate SAMs. This decrease has been attributed to the formation of an interface dipole1. Hence the question arises: Is it possible to improve BCBG OFETs by minimizing the charge injection barrier employing dithiocarbamate SAMs as S/D-contact modification? In this study we present the influence of dithiocarbamate SAMs on charge transport and trap state distributions in BCBG OFETs and compare them to unmodified TCBG OFETs for different n- and p-type organic semiconductors.
1P. Schulz et al., 2011 MRS Fall Meeting & Exhibit U13.17