Regensburg 2013 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 32: Poster Session IV: Atomic layer deposition; Organic thin films; Organic Electronics and Phototovoltaics; Organic Materials for Spintronics - from spinterface to devices; Thin film photovoltaic materials and solar cells
DS 32.7: Poster
Donnerstag, 14. März 2013, 17:00–20:00, Poster B2
Electrical Characterization of Copper Phthalocyanine / Amorphous Silicon Hybrid Structures — •Evelyn T. Breyer, Daniel Lehmann, and Dietrich R. T. Zahn — Semiconductor Physics, TU Chemnitz, 09107 Chemnitz, Germany
Organic-inorganic hybrid junctions combine the advantageous properties of organic and inorganic layers. The electrical properties of amorphous silicon (a-Si) strongly depend on the conditions during deposition, e.g. substrate temperature and hydrogen flow. By surface modification of the amorphous silicon it is intended to force copper phthalocyanine molecules to adopt a “lying down” orientation on the substrate, which favours electrical conduction through the vertical stack, and is therefore desired for photovoltaic devices.
Hydrogenated amorphous silicon (a-Si:H) was sputtered onto borosilicate glass with NiCr contact fingers by DC pulsed magnetron sputtering at a constant substrate temperature of 150 ∘C. Thin films of CuPc (nominal thickness up to 50 nm) were deposited onto the amorphous silicon by Organic Molecular Beam Deposition (OMBD) under high vacuum conditions (3× 10−7 mbar). Finally, silver electrodes were thermally evaporated onto the cooled sample (T ≈ −150 ∘C) without breaking the vacuum. Current-voltage measurements were performed ex situ directly after deposition under dark and illuminated conditions (solar simulator, AM 1.5). Temperature dependent I-V curves were recorded. Two types of current transport dominate in the chosen voltage range (-2V...2V): thermionic emission and space charge limited conduction (SCLC).