Regensburg 2013 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 32: Poster Session IV: Atomic layer deposition; Organic thin films; Organic Electronics and Phototovoltaics; Organic Materials for Spintronics - from spinterface to devices; Thin film photovoltaic materials and solar cells

DS 32.9: Poster

Donnerstag, 14. März 2013, 17:00–20:00, Poster B2

Characterisation of Trap States in Transition Metal Phthalocyanine Thin Film Transistors — •Stefan Klaes, Christian Effertz, and Matthias Wuttig — I. Physikalisches Institut (IA), RWTH Aachen University, D-52056 Aachen, Germany

The family of phthalocyanines is promissing for novel organic thin film applications. Transition metal phthalocyanines exhibit very different charge carrier mobilities dependent on the transition metal even though their structural properties remain similar. The influence of the center metal atom on charge transport properties is not yet fully understood. To obtain a deeper understanding of electronic transport in organic thin film devices the charge carrier transport of several different transition metal phthalocyanines has been investigated. To do so SiO2 bottom gate/Au top contact Organic Thin Film Transistors (OTFT) with different transition metal phthalocyanines as the active layers have been produced. Their properties like charge mobility, time-domain-effects and trap depth have been examined, in particular to determine the influence of trap states. Additionally DFT based model calculations have been performed to gain a further insight into these phenomena.