Regensburg 2013 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 35: Application of Thin Films
DS 35.8: Vortrag
Freitag, 15. März 2013, 11:15–11:30, H8
Retention of Ferroelectric VDF-TrFE Copolymer Thin Films Characterized by Nondestructive Polarization Readout — •Danny von Nordheim1, Sebastian Koch1, Soichiro Okamura2, and Bernd Ploss1 — 1Department of SciTec, University of Applied Sciences Jena, Carl-Zeiss-Promenade 2, 07745 Jena, Germany — 2Department of Applied Physics, Tokyo University of Science, Shinjuku, Tokyo 162-8601, Japan
Usual retention tests are based on the application of read pulses to a ferroelectric sample while the charge response is recorded. These tests, however, do not allow the continuous recording of retention as after the application of the read pulse the ferroelectric is in a new state defined by the sign of the read pulse. We propose a novel approach which is based on the nondestructive readout of the remanent polarization by measurement of small signal dielectric nonlinearities. The temporal development of the remanent polarization is directly accessible from the measured first and second harmonics in the current response to a small sinusoidal voltage signal. The novel technique has been used to investigate the retention of thin VDF-TrFE copolymer films of molar ratio 70/30 with thickness below 200 nm. This technique may also be useful for the nondestructive readout of ferroelectric memory cells. Compared to the destructive readout by polarization switching the rewrite of the initial polarization is not required and the lifetime of the memory cell increased.