Regensburg 2013 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 5: Charge Transfer Effects in Molecular Materials I (jointly with BP, CPP, HL)
DS 5.4: Vortrag
Montag, 11. März 2013, 13:00–13:15, H1
In operando STXM investigations of charge carriers in SAMFET devices — •Andreas Späth1, Thomas Schmaltz2, Benjamin Watts3, Marcus Halik2, and Rainer H. Fink1 — 1FAU Erlangen-Nürnberg, Physical Chemistry II, Erlangen, Germany — 2FAU Erlangen-Nürnberg, Polymer Sciences, Erlangen, Germany — 3Swiss Light Source, Paul Scherrer Institut, Villigen, Switzerland
Based on previous work on pentacene based organic FETs [1], we present first results of zone plate scanning transmission soft x-ray microspectroscopy (STXM) on novel organic devices based on self assembled monolayers (SAMs). STXM combines high lateral resolution and spectroscopic sensitivity. Electron detection is used to achieve surface sensitivity, thus offering access to monolayer films. The SAMs implement all functionalities of the FET, i.e. gate dielectric and organic semiconductor [2]. STXM analysis within the active channel during operation of the SAMFET shows small variations in the electronic structure which are interpreted in terms of field induced shifts of the electronic levels and/or local charges. The unique combination of STXM and AFM provided by the NanoXAS beamline at the Swiss Light Source enables us to monitor both, the morphological homogeneity of the SAM film and modifications in the electronic structure. Thus, a more detailed insight into the correlation of morphological and electronic properties of these ultrathin devices can be achieved. The project is funded by the BMBF (contract 05K10WEA).
[1] C. Hub, et al., J. Mater. Chem. 20, 2010, 4884
[2] A. Rumpel, et al., Langmuir 27, 2011, 15016