Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 102: Quantum dots and wires: Transport
HL 102.2: Vortrag
Freitag, 15. März 2013, 11:30–11:45, H13
Magnetotransport in nanostructured InAs-based High Electron Mobility Transistors — •Olivio Chiatti1, Sven S. Buchholz1, Wolfgang Hansen2, and Saskia F. Fischer1 — 1Neue Materialien, Institut für Physik, Humboldt-Universität zu Berlin, D-10099 Berlin — 2FG Wachstum, Institut für Angewandte Physik, Universität Hamburg, D-20148 Hamburg
The controlled creation, manipulation and detection of spin-polarized currents entirely by electrical means is the holy grail of spintronics. A possible tool to this end is the spin-orbit coupling in narrow-gap semiconductors, which couples the momentum (orbital motion) of an electron to its spin. Using nanostructures to filter specific momentum modes using electric fields, it should be possible to create and detect spin-polarized currents. [1] Recently, quantum point contacts (QPCs) fabricated in nominally symmetric InAs quantum well structures have been reported to generate spin-polarized currents, when asymmetric gate voltages are applied. [2]
We have fabricated QPCs with in-plane gates in InAs quantum well structures, and performed magnetotransport measurements at temperatures down to 300 mK and in magnetic fields up to 10 T. We investigate the effects of symmetric and asymmetric gate voltages. Here, we present the results of our measurements and discuss their implications for investigations of the spin-orbit coupling in InAs.
[1] Silsbee, J. Phys.: Condens. Matter 16, R179 (2004)
[2] Debray et al., Nature Nanotech. 4, 759 (2009)