Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 13: Preparation and characterization

HL 13.5: Vortrag

Montag, 11. März 2013, 13:45–14:00, H15

Epitaxial cubic and wurtzite ZnS thin films grown on GaP and ZnS substrates — •Gunther Haas, Melanie Pinnisch, Johannes Bieber, Yinmei Lu, Elisabeth Zolnowski, and Bruno Meyer — I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff Ring 16, 35392 Giessen

Zinc sulfide is a wide band gap material with two stable solid structures. A cubic structured phase with a room temperature band gap of 3.6 eV and a wurtzite phase, which is known to form at temperatures above 1050 °C, with a band gap of approx. 3.9 eV. We have grown epitaxial zinc sulfide thin films and investigated the influence of different substrates (GaP (001), GaP (111), GaP (011) and ZnS (011)) on the resulting properties and orientations of the grown films. For a variation in growth temperatures (from 450 to 800 °C) our results show a structural transition from zinc blende to wurtzite structure at higher growth temperatures when using GaP (111) substrates. These observations are underlined by X-ray analysis and atomic force microscopy, which shows hexagonal structures at the surface for zinc sulfide grown at higher temperatures on GaP (111) substrates. Low temperature photoluminescence measurements at 4 K provide an insight into the optical properties of the two different zinc sulfide phases.