Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 15: Focus Session: Crystalline n-type semiconducting oxides - SnO2, Ga2O3, and In2O3 for novel devices (HL, jointly with O)
HL 15.11: Vortrag
Montag, 11. März 2013, 19:00–19:15, H2
Electron transport in molecular-beam-epitaxy-grown SnO2 and In2O3 films: Doping, defects, and the surface — •Oliver Bierwagen1,2, Natalie Preissler1, Takahiro Nagata2,3, Mark E. White2, Min-Ying Tsai2, and James S. Speck2 — 1Paul-Drude-Institut, Berlin, Germany — 2University of California, Santa Barbara, USA — 3National Institute for Material Science, Tsukuba
Electron transport and its control are key issues for the application of semiconducting oxides in (opto)electronic devices. To this end, the electron transport in unintentionally- and intentionally doped, high quality, molecular-beam-epitaxy-grown tin oxide (SnO2) and indium oxide (In2O3) films is reviewed.[1] Comparably high mobilities indicate high purity and quality.[2] The resistivity was successfully varied over more than seven orders of magnitude from a transparent conducting oxide-like conductivity by donor doping up to the semi-insulating range (but no p-type conductivity) by acceptor doping.[3,4] Oxygen-related defects play a critical role in In2O3.[2, 4] A surface electron accumulation layer is present in both oxides.[5,6] While it strongly influences contact properties,[6,7] its conductance is negligible.[3,6]
O. Bierwagen et al.*Chapter 15 - MBE of transparent semiconducting oxides* in *Molecular Beam Epitaxy*, Elsevier Oxford (2012).
O. Bierwagen and J.S. Speck, Appl. Phys. Lett. 97, 072103 (2010).
O. Bierwagen et al., J. Mater. Res. 27, 2232 (2012).
O. Bierwagen and Speck, Appl. Phys. Lett. 101, 102107 (2012).
T. Nagata et al., Appl. Phys. Lett. 98, 232107 (2011).
O. Bierwagen et al., Appl. Phys. Lett. 98, 172101 (2011).
O. Bierwagen et al., Appl. Phys. Express 2, 106502 (2009); T. Nagata et al. J. Appl. Phys. 107, 033707 (2010).