Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 15: Focus Session: Crystalline n-type semiconducting oxides - SnO₂, Ga₂O₃, and In₂O₃ for novel devices (HL, jointly with O)

HL 15.5: Topical Talk

Montag, 11. März 2013, 16:45–17:15, H2

Development of gallium oxide power devices — •Masataka Higashiwaki^1,2, Kohei Sasaki^1,3, Akito Kuramata³, Takekazu Masui⁴, and Shigenobu Yamakoshi³ — ¹National Institute of Information and Communications Technology, Koganei, Tokyo, Japan — ²JST PREST, Chiyoda, Tokyo, Japan — ³Tamura Corporation, Sayama, Saitama, Japan — ⁴Koha Co., Ltd., Nerima, Tokyo, Japan

Gallium oxide (Ga₂O₃) has excellent material properties for power device applications represented by the extremely large breakdown field of 8 MV/cm due to a large band gap of 4.8–4.9 eV. Another important feature in industry is that large single-crystal β-Ga₂O₃ bulks can be fabricated with melt-growth methods. We recently succeeded in fabricating Ga₂O₃ metal-semiconductor field-effect transistors (MESFETs) and Schottky barrier diodes (SBDs) on single-crystal β-Ga₂O₃ substrates by using newly developed technologies for making single-crystal substrates, growing conductivity-controlled epitaxial films, and fabricating devices. The MESFETs exhibited excellent device characteristics including an off-state breakdown voltage (V_br) over 250 V, an extremely low leakage current (several µA/mm), and a high on/off drain current ratio of around 10,000. The SBDs also showed good characteristics such as an ideal factor very close to 1.0 and a high reverse V_br. These results indicate that Ga₂O₃ have comparable or even more potential than Si and typical widegap semiconductors SiC and GaN for power device applications.