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Regensburg 2013 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 17: Interfaces and surfaces

Monday, March 11, 2013, 15:00–17:00, H15

15:00 HL 17.1 Photoluminescence spectroscopy of singlelayer MoS2 — •Gerd Plechinger, Stefanie Heydrich, Johannes Schmutzler, Jonathan Eroms, Dieter Weiss, Christian Schüller, and Tobias Korn
15:15 HL 17.2 Optical properties of single-layer, double-layer, and bulk MoS2 — •Alejandro Molina-Sánchez, Ludger Wirtz, and Kerstin Hummer
  15:30 HL 17.3 The contribution has been withdrawn.
15:45 HL 17.4 Surface characterization of MOVPE prepared Si(111) substrates for III-V nanowire solar cells — •Weihong Zhao, Agnieszka Paszuk, Matthias Steidl, Sebastian Brückner, Anja Dobrich, Johannes Luczak, Peter Kleinschmidt, Henning Döscher, and Thomas Hannappel
16:00 HL 17.5 From surface dimers to Si—P bonds at the GaP/Si(100) heterointerface — •Oliver Supplie, Sebastian Brückner, Henning Döscher, Peter Kleinschmidt, and Thomas Hannappel
16:15 HL 17.6 Surface characteristics of polar InN layers grown by MOVPE, MBE and migration enhanced afterglow techniques. — •Daria Skuridina, Duc V. Dinh, Rolf Aidam, Michael Kneissl, and Patrick Vogt
16:30 HL 17.7 AlGaN/GaN Enzyme-Modified Field-Effect Transistors for Analysis of Enzyme Functionality — •Gesche Mareike Müntze, Wladimir Schäfer, Kai Röth, Alexander Sasse, and Martin Eickhoff
16:45 HL 17.8 Silicon surface properties after irradiation with single femtosecond laser pulses under SF6 atmosphere — •Kay-Michael Günther, Hartmut Witte, Jürgen Blaesing, Alois Krost, Thomas Gimpel, Wolfgang Schade, and Stefan Kontermann
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