Regensburg 2013 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 28: Poster Session: Graphen; Transport properties; Transport in high magnetic fields / Quantum Hall effect; Metal-semiconductor hybrid systems

HL 28.18: Poster

Montag, 11. März 2013, 16:00–20:00, Poster A

Determination of trap and band states in printable thin film transistors by scanning Kelvin probe microscopy — •Sebastian Hietzschold^1,2,3, Florian Mathies^1,2,4, Rebecca Saive^1,2,3, Norman Mechau^2,4, and Wolfgang Kowalsky^1,2,3 — ¹Kirchhoff-Institut für Physik, Universität Heidelberg, Germany — ²InnovationLab, Heidelberg, Germany — ³Institut für Hochfrequenztechnik, Technische Universität Braunschweig, Germany — ⁴Lichttechnisches Institut, Karlsruhe Institut für Technologie, Germany

The development of printed thin film transistors (TFTs) is of utmost importance enabling large-area electronics by low cost fabrication. Former work, e.g. M. Koehler et al., has shown that a fundamental understanding of charge carrier transport in the active material and at interfaces is essential improving device performance [1]. Therefore we investigate TFTs with scanning Kelvin probe microscopy (SKPM) in an ultra-high vacuum environment. We apply different gate bias leading to a filling and emptying of electronic states and measure in-situ the shift in the surface potential respectively. Hereby we indirectly gain the density of trap as well as band states (DOS). The DOS energy distribution provides information on many electronic properties in semiconductor films and is therefore crucial for a performance improving of printed thin film transistors.
[1] M. Koehler and I. Baggio, Phys. Rev. B 68, 075205 (2003)