Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 28: Poster Session: Graphen; Transport properties; Transport in high magnetic fields / Quantum Hall effect; Metal-semiconductor hybrid systems
HL 28.6: Poster
Montag, 11. März 2013, 16:00–20:00, Poster A
Silicon nitride as top gate dielectric for epitaxial graphene — •Peter Wehrfritz1, Felix Fromm1, Stefan Malzer2, and Thomas Seyller1,3 — 1FAU Erlangen-Nürnberg, Technische Physik, Erlangen, Deutschland — 2FAU Erlangen-Nürnberg, Angewandte Physik, Erlangen, Deutschland — 3TU Chemnitz, Institut für Physik, Chemnitz, Deutschland
Epitaxial graphene grown under atmospheric pressure offers an opportunity for large scale electronic device fabrication [1]. A suitable top gate dielectric, however, is still to be found. Al2O3 and HfO2 grown by atomic layer deposition provides high quality dielectrics. Unfortunately it is not possible to grow closed layer on graphene without additional surface activation [2, 3].
We have investigated silicon nitride (SiN) grown by plasma enhanced chemical vapor deposition (PECVD) as top gate material on epitaxial graphene on 6H-SiC(0001). The NH3 and SiH4 flow rate ratio was optimized on the basis of x-ray photoelectron spectroscopy (XPS) measurements. The formed SiN layer is closed. Raman spectroscopy and transport measurements which were performed before and after the SiN deposition revealed that the plasma process leads only to a minor degradation of the graphene. The SiN layer induces strong n-type doping proven by Hall measurements, transfer characteristic and XPS measurements.
[1] K. Emtsev et al., Nat. Mat. 8, 203 - 207 (2009).
[2] S. Kim et al., Appl. Phys. Lett. 94, 062107 (2009).
[3] B. Lee et al., Appl. Phys. Lett. 92, 203102 (2008).