Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 29: Poster Session: Spintronics; Spin-controled transport; Topological insulators; Interfaces / Surfaces; Magnetic semiconductors
HL 29.16: Poster
Montag, 11. März 2013, 16:00–20:00, Poster A
Modification of spin dynamics in ion-implanted wurtzite semiconductors — •Jago Döntgen1, Jan Heye Buß1, Jörg Rudolph1, Stepan Shvarkov2, Andreas D. Wieck2, and Daniel Hägele1 — 1AG Spektroskopie der kondensierten Materie, Ruhr-Universität Bochum, Germany — 2Angewandte Festkörperphysik, Ruhr-Universität Bochum, Germany
The wide-gap wurtzite semiconductors GaN and ZnO possess high potential for opto-electronics as well as high-frequency and high-power electronics. Their spin-related properties are in the focus of intense research originally motivated by theoretical predictions of ferromagnetism above room-temperature in rare-earth- or transition-metal-doped material [1]. We use time-resolved Kerr-Rotation spectroscopy to investigate electron spin oscillations in a magnetic field after implantation of GaN with Gadolinium and coimplantation with Si. We
find strongly increased spin lifetimes for moderate Gd-implantation doses and a transition to isotropic
spin relaxation from the anisotropic case known from unimplanted GaN [2]. The increased spin lifetimes in combination with the disappearance of anisotropy
is a fingerprint of localized defect-states caused by implantation with Gd. An enhanced alignment of electron spins along the magnetic field by Gd could not be observed.
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