Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 29: Poster Session: Spintronics; Spin-controled transport; Topological insulators; Interfaces / Surfaces; Magnetic semiconductors
HL 29.20: Poster
Montag, 11. März 2013, 16:00–20:00, Poster A
Synthesis of topological insulators at the nanoscale — •Christian Nowka1, Silke Hampel1, Udo Steiner2, Lars Giebeler1, Jochen Geck1, Jorge E. Hamann Borrero1, Sandeep M. Gorantla1, Andreas Teichgräber1, Romain Giraud1, Joseph Dufouleur1, and Bernd Büchner1 — 1Institute of Solid State Research - IFW Leibniz institute, Helmholtzstr. 20, D-01069 Dresden — 2Hochschule für Technik und Wirtschaft Dresden, Friedrich-List-Platz 1, D-01069 Dresden
In this work we investigated the growth of Bi2Se3 topological insulator by gasphase transports. The obtained crystals have been characterized by SEM, TEM, AFM, EDX and XRD. To understand the growth mechanisms we performed thermodynamic modelling with the program Tragmin. The experimental growth of Bi2Se3 has been simply done by decomposition sublimation. By synthesis of Bi2Se3-layers thin (≈ 10 nm), singlecrystalline crystals was deposited on the Si/SiO2–substrate. For instance nanoribbons with a crystal size in a, b–direction between 3–40 µm and up to 70 µm for nanowires. The manganese-doped Bi2Se3 crystals were grown by chemical transport reaction. For this purpose powder of Mn/Bi/Se with different Mn content and Iodine as a transport agent was used. Several experiments showed the possibility of a gasphase transport of Mn/Bi/Se-powder with a high Mn content in a gradient △ T < 100 K. In this case, crystals of MnBi2Se4 was deposited on the Si/SiO2–substrate.