Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 29: Poster Session: Spintronics; Spin-controled transport; Topological insulators; Interfaces / Surfaces; Magnetic semiconductors

HL 29.3: Poster

Monday, March 11, 2013, 16:00–20:00, Poster A

First Steps towards Spin Noise Spectroscopy in Sillicon — •André Grieger, Jan Gerrit Lonnemann, Jens Hübner, and Michael Oestreich — Insitute for Solid State Physics, Leibniz Universität Hannover, Appelstr. 2, D-30167 Hannover, Germany

Semiconductor spin noise spectroscopy (SNS) has evolved as a powerful experimental technique to explore spin dynamics in close vicinity to thermal equilibrium [1]. Not beeing masked by optical excitations SNS is a very verstile technique that uses off resonant Faraday rotation and consequently avoids carrier heating and optical excitation.

SNS has already been utilized to analyse the spin dynamics of conduction electrons in GaAs [2]. Recent measurements have been performed on highly n-doped (10¹⁷ cm⁻³) bulk GaAs at a temperature of 20 K in dependence on the applied magnetic field (0-8T) with integration times below 5 minutes [3]. We are extending SNS to silicon which is doped well above the metal isolator transition. The theoretical calculations of the selection rules in silicon are difficult due to the indirect band gap of sillicon where transitions between valence and conduction band are phonon-assisted processes [4]. The expected long integration times require a very stable experimental setup. Thus steps taken towards such a long-term stable system will be presented.

[1] Georg M. Müller et al.; Physica E, 43, 569 (2010).

[2] M. Römer et al., Rev. Sci. Instrum., 78, 103903 (2007).

[3] F. Berski et al., arXiv, 1207.0081 (2012).

[4] J.L. Cheng et al., Phys. Rev. B, 83, 165211 (2011).