Regensburg 2013 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 39: Optical properties
HL 39.4: Vortrag
Dienstag, 12. März 2013, 11:00–11:15, H13
Fabrication and characterization of GaAs-based Air-Bragg microcavity structures — •Jonas Geßler1, Arkadiusz Piotr Mika1,2, Julian Fischer1, Matthias Amthor1, Alfred Forchel1, Jan Misiewicz2, Sven Höfling1, Christian Schneider1, and Martin Kamp1 — 1Julius Maximilian Universität Würzburg — 2Wroclaw University of Technology
The high index contrast between Air and Gallium-Arsenide (GaAs) can lead to an enhanced photon confinement compared to GaAs/ Aluminum-Arsenide Bragg microcavities. This can be used to reduce the effective mode volume and to enhance light matter coupling effects in a GaAs/Air Bragg system with active quantum well (QW) emitters. We will present the fabrication of freely suspended GaAs/Air structures with Q-factors exceeding 1000. Various strategies for in-plane photon confinement are demonstrated experimentally, resulting in photonic structures with quasi 2D, 1D and 0D characteristics. We finally demonstrate laser emission from weakly coupled QW-GaAs/Air Bragg systems and discuss indications for the formation of QW-exciton polaritons in our novel system.