Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 39: Optical properties
HL 39.5: Vortrag
Dienstag, 12. März 2013, 11:15–11:30, H13
Investigation of the strong coupling regime in GaAs microcavities up to room temperature — •Sebastian Brodbeck1, Jan-Philipp Jahn1, Arash Rahimi-Iman1, Julian Fischer1, Matthias Amthor1, Stephan Reitzenstein1,2, Christian Schneider1, Martin Kamp1, and Sven Höfling1 — 1Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, 97074 Würzburg — 2Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin
We study the strong coupling regime in a microcavity with GaAs quantum wells in the full temperature region between 4K and room temperature. Pronounced anticrossing of the polariton branches in reflection measurements is observed for all investigated temperatures. The temperature dependence of the vacuum Rabi splitting is reproduced by a simple equation with one fitting parameter. At room temperature we measure a vacuum Rabi splitting of more than 6meV.
The strong coupling regime at room temperature is also observed in an electrically driven sample whose electroluminescence shows two well resolved polariton branches. This device features an innovative pumping scheme where a reversely biased Esaki diode is placed in the cavity region in order to improve the electric pumping of the spatially separated quantum well stacks. The mixed light-matter nature of the emitting states is confirmed in photoluminescence measurements with varying bias where a Stark shift of up to 4meV is observed for both polariton branches.