Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 4: III-V semiconductors: mainly wells and surfaces
HL 4.6: Vortrag
Montag, 11. März 2013, 10:45–11:00, H15
Temperature-dependent external quantum efficiency of Ga(NAsP) quantum wells — •Robin Döring1, Nils Rosemann1, Bernardette Kunert2, Wolfgang Stolz1, 2, Kerstin Volz1, and Sangam Chatterjee1 — 1Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg, Germany — 2NAsP III/V GmbH, Am Kechtacker 19, D-35041 Marburg, Germany
Silicon is the basis for today's microelectronics and even some optoelectronic components such as waveguides; however, it is not considered useful as an active medium for lasers due to the nature of its indirect bandgap. Various approaches have been pursued to add this functionality to Si microelectronics such as Raman-or nanocrystal-based concepts both native to silicon or hybrid integration. An alternative concept is the quasi-lattice matched integration of direct-gap GaP based quaternary alloys. Here, electrically pumped lasing has already been demonstrated[1]. Nevertheless, many challenges such as low-temperature operation and comparatively large laser thresholds remain. To help tackle these, we investigated a series of Ga(NAsP)/GaP multiple quantum well (MQW) samples by temperature-dependent absolute photoluminescence spectroscopy using an integrating sphere mounted inside a cryostate. The results are compared to a standard laser material, a high-quality (GaIn)As/GaAs MQW. At low temperatures, the reference sample outperforms the Ga(NAsP) structures. While the EQEs of both materials are comparable at room temperature for our experimental conditions. [1]Appl. Phys. Lett. 99, 071109, (2011)